我要找:  
您的位置:電源在線首頁>>行業資訊>>新品速遞>>Microsemi Announces Next Generation NPT Technology For High Switching Frequency Applications正文

Microsemi Announces Next Generation NPT Technology For High Switching Frequency Applications

2007/9/17 9:05:11   電源在線網
分享到:

    Microsemi Corporation has announced a new series of high speed IGBT transistors developed for welding, low to mid-power solar inverters, uninterruptible power supplies and industrial switch mode power supply applications.

    Designated the Thunderbolt HS™ IGBT Series, the new IGBTs are Microsemi’s next generation of NPT technology targeting high switching frequency applications. These devices exhibit higher saturation voltage and significantly lower turn-off energy losses than previous generations. Low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but at lower cost.  Thunderbolt HS™ IGBTs are available as single devices or packaged with a DQ Series fast, soft recovery diode.

Key Features
• High speed switching with reduced E(off) loss
• Newest generation of NPT technology
• Tight parameter distribution and easy paralleling
• 10 micro second short circuit rating
• Available with DQ Series Combi diode
• Low EMI
• High noise immunity
• High reliability

An extremely tight parameter distribution combined with a positive temperature coefficient make it easy to parallel Thunderbolt HS™ IGBTs.  Controlled slew rates result in high noise and oscillation immunity and low EMI. The short circuit duration rating of 10 microseconds makes these IGBTs suitable for inverter and motor drive applications. Reliability is further enhanced by avalanche energy ruggedness.

The exceptional fast recovery performance of the anti-parallel DQ diode in Combi versions make the Thunderbolt HS™ series well suited for hard switching applications.  The Combi diode performance combined with fast turn-off of the IGBT combine to yield superior reliability in ZVS applications.  The Thunderbolt HS™ Series is an ideal solution for medium to high power applications requiring minimum system cost and high performance.

Rated at 600 volts and 2.8 volts typical V(CE(ON) the new high speed IGBTs are available in 20 amp, 30 amp, and 50 amp versions in TO-220, TO-247, or D(3) packages. Combi versions include a DQ series fast recovery anti-parallel diode.

The single IGBT Thunderbolt devices: 20 amp--APT20GS60KRG; 30 amp--APT30GS60KRG; 50 amp--APT50GS60BRG.

Combi IGBT Thunderbolt and DQ fast recovery diode devices: 20 amp--APT20GS60BRDQ1G;
30 amp--APT30GS60BRDQ2G; 50 amp--APT50GS60BRDQ2G.

Thunderbolt and Combi samples are available immediately. Prices range from $1.43 to $3.18 for single IGBTs in quantities of 1K pieces, and from $2.18 to $3.85 for combi’s with DQ diodes.

   免責聲明:本文僅代表作者個人觀點,與電源在線網無關。其原創性以及文中陳述文字和內容未經本站證實,對本文以及其中全部或者部分內容、文字的真實性、完整性、及時性本站不作任何保證或承諾,請讀者僅作參考,并請自行核實相關內容。
編輯:Ronvy
本文鏈接:Microsemi Announces
http:www.wnxrsj.cn/news/2007-9/20079179511.html
文章標簽: Microsemi/IGBT/HS
  投稿熱線 0755-82905460    郵箱  :news@cps800.com
關于該條新聞資訊信息已有0條留言,我有如下留言:
請您注意:
·遵守中華人民共和國的各項有關法律法規
·承擔一切因您的行為而導致的法律責任
·本網留言板管理人員有權刪除其管轄的留言內容
·您在本網的留言內容,本網有權在網站內轉載或引用
·參與本留言即表明您已經閱讀并接受上述條款
用戶名: 密碼: 匿名留言   免費注冊會員
關鍵字:
        
按時間:
關閉
主站蜘蛛池模板: 亚洲综合色在线观看亚洲| 一本久久a久久精品vr综合| 久久综合九色综合网站| 色综合天天综合中文网| 久久综合亚洲色HEZYO国产| 一本久久综合亚洲鲁鲁五月天亚洲欧美一区二区 | 国产欧美日韩综合AⅤ天堂| 五月婷婷综合免费| 99久久国产综合精品女同图片| 亚洲伊人久久综合中文成人网| 色777狠狠狠综合| 亚洲精品综合久久| 婷婷色香五月综合激激情| 久久综合伊人77777麻豆| 一本久久a久久精品综合香蕉| 久久综合给合久久国产免费 | 亚洲情综合五月天| 国产综合精品蜜芽| 日韩无码系列综合区| 色欲综合久久躁天天躁| 亚洲综合在线视频| 97久久天天综合色天天综合色hd | 欧美日韩国产色综合一二三四| heyzo专区无码综合| 国产婷婷色综合AV蜜臀AV| 色综合久久久久久久久五月| 国产成人综合网在线观看| 亚洲伊人色欲综合网| 久久99国产综合精品免费| 欧美精品国产日韩综合在线| 色噜噜狠狠狠综合曰曰曰| 国产色婷婷五月精品综合在线| 亚洲色欲色欲综合网站| 91精品国产综合久久香蕉| 亚洲综合亚洲综合网成人| 久久婷婷五月综合国产尤物app| 久久国产综合精品五月天| 综合网日日天干夜夜久久| 亚洲欧美综合一区二区三区| 青青综合在线| 亚洲香蕉网久久综合影视|